GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy

We have experimentally studied the photoresponse characteristics of strained In,Gar _ XAs (0.05<~<0.20) p-i-n photodiodes grown in small holes etched in GaAs substrates where the thickness of the i region exceeds the critical thickness. The diodes exhibit enhanced quantum efficiency and no degradation of the temporal response compared with devices grown on planar substrates, indicating that red...

InGaAsÕAlGaAs intersubband transition structures grown on InAlAs buffer layers on GaAs substrates by molecular beam epitaxy

We report on the use of InAlAs linearly graded buffer layers for improving the performance of InyGa12yAs (y.0.42)/AlGaAs intersubband transition ~ISBT! superlattice structures grown on GaAs substrates by molecular beam epitaxy. Linearly graded InAlAs buffer layers give better optical confinement in the active superlattice region, similar intersubband transition linewidths, and comparable surfac...

Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge„100... substrates

In this article we investigate the growth of GaAs on two different vicinal surfaces of Ge ~100!, cut 6° off the ~100! plane toward the ~110! plane or toward the ~111! plane. Both substrates exhibit evidence of a regular array of double steps. Ge substrates and GaAs films are characterized with low energy electron diffraction, low temperature photoluminescence, scanning tunneling microscopy, ele...

Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy

GaN films are grown on [0 0 1] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. X-ray diffraction and transmission electron microscopy indicate that this method promotes prismatic growth of c-oriented a-GaN. Photoluminescence studies show...